The Vitesco Technologies Group became part of the Schaeffler Group as of October 1, 2024, due to the merger of Vitesco Technologies Group AG into Schaeffler AG.

Please note: Legal or actual changes since October 1, 2024, are therefore no longer reflected in the content of the website.

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Irrespective of this, you can still find the current BPCoC and the General Terms and Conditions of Purchase at Vitesco Technologies - Suppliers (vitesco-technologies.com)

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    • Vitesco Technologies further strengthens its position in the field of silicon carbide (SiC) semiconductors
    • The cooperation with Infineon opens up the possibility of additional capacity for the strong growth in electromobility
    • SiC semiconductors greatly contribute to the efficiency of power electronics with up to 800-volt and thus increase the range of electric vehicles
    • As a part of the cooperation with Infineon specific development of SiC components will be included

    Regensburg, May 31, 2022. Vitesco Technologies, a leading international supplier of modern drive technologies and electrification solutions, has signed a cooperation agreement with Infineon Technologies AG. Infineon is the world's leading semiconductor manufacturer for automotive electronics and a leading global supplier of power semiconductors made of the innovative material silicon carbide (SiC). Silicon carbide plays a key role in increasing the efficiency of high-voltage power electronics in the drive systems of electrified vehicles. Vitesco Technologies uses SiC components, for example, in very compact high-voltage inverters that control electric drive motors.

    As one of the pioneers in electromobility, Vitesco Technologies is already using SiC components in the current generation of electronics, where they enable small sizes with high efficiency. 

    Vitesco Technologies enters into a cooperation with Infineon Technologies AG on silicon carbide (SiC) semiconductors.

    Vitesco Technologies enters into a cooperation with Infineon Technologies AG on silicon carbide (SiC) semiconductors.
    © Infineon Technologies

    “In silicon carbide, Infineon is a technological and quality leader,” said Dr. Stephan Zizala, head of the Automotive High Power business unit at Infineon Technologies. “Our second silicon carbide generation enables us to develop even more compact and efficient systems. With our decades of experience and continuous expansion of manufacturing capacities, we are well positioned for the accelerated growth of the SiC market.” 

    Efficiency is everything 

    SiC power semiconductors are a new trend in electronics with voltage layers for electrified drives up to 800-volt system voltage. Compared to conventional semiconductors made of silicon, SiC offers an efficiency advantage, especially at a battery voltage of 800-volt, which subsequently then affects the range of an electric vehicle. “Range is a key performance characteristic in battery electric driving, higher efficiency power semiconductors such as SiC will therefore be increasingly used in the future,” highlighted Thomas Stierle, member of the executive board and head of the Electrification Technology business unit at Vitesco Technologies. 

    For Vitesco Technologies, this is the second partnership in SiC devices. “We have had excellent experience with the partnership already underway and have industrialized initial applications,” said Stierle. In view of the strong order intake for electric drives, for example for very compact axle drives, the broad supply base is a strategically important course setting and ensures long-term success.

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